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ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFETTM MOSFET
SUMMARY
Continuous drain source voltage 60 V On-state resistance Nominal load current (VIN = 5V) Clamping Energy 200 m 1.8 A 210 mJ
DESCRIPTION
The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, overcurrent, over-voltage (active clamp) and ESD protected logic level functionality independently per channel. The ZXMS6005DT8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.
SM8 Package
FEATURES
* * * * * * * * * Compact dual package Low input current Logic Level Input (3.3V and 5V) Short circuit protection with auto restart Over voltage protection (active clamp) Thermal shutdown with auto restart Over-current protection Input Protection (ESD) High continuous current rating
ORDERING INFORMATION
DEVICE PART MARK REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL
ZXMS6005DT8TA
ZXMS 6005D
7
12 embossed
1,000 units
ZXMS6005DT8
Document Number DS32248 Rev. 1 - 2
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(c) Diodes Incorporated
A Product Line of Diodes Incorporated
FUNCTIONAL BLOCK DIAGRAM
D1/2
Over Voltage Protection
IN1/2
Human body ESD protection Over temperature protection Logic Over current protection
dV/dt limitation
S1/2
APPLICATIONS AND INFORMATION
* * * * * * * Two completely isolated independent channels Especially suited for loads with a high in-rush current such as lamps and motors. All types of resistive, inductive and capacitive loads in switching applications. C compatible power switch for 12V DC applications. Automotive rated. Replaces electromechanical relays and discrete circuits. Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimise on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product's ability to selfprotect at low VDS.
ZXMS6005DT8
Document Number DS32248 Rev. 1 - 2
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ABSOLUTE MAXIMUM RATINGS
PARAMETER Continuous Drain-Source Voltage Drain-Source Voltage for short circuit protection Continuous Input Voltage Continuous Input Current -0.2VVIN6V VIN<-0.2V or VIN>6V Operating Temperature Range Storage Temperature Range Power Dissipation at TA =25C (a)(d) Linear Derating Factor Power Dissipation at TA =25C (a)(e) Linear Derating Factor Power Dissipation at TA =25C (b)(d) Linear Derating Factor Pulsed Drain Current @ VIN=3.3V Pulsed Drain Current @ VIN=5V Continuous Source Current (Body Diode) (a) Pulsed Source Current (Body Diode) Unclamped single pulse inductive energy, Tj=25C, ID=0.5A, VDD=24V Electrostatic Discharge (Human Body Model) Charged Device Model IDM IDM IS ISM EAS VESD VCDM PD PD Tj, Tstg PD SYMBOL VDS VDS(SC) VIN IIN No limit IIN 2 -40 to +150 -55 to +150 1.16 9.28 1.67 13.3 2.13 17 5 6 2.5 10 210 4000 1000 C C W mW/C W mW/C W mW/C A A A A mJ V V LIMIT 60 24 -0.5 ... +6 UNIT V V V mA
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a)(d) Junction to Ambient (a)(e) Junction to Ambient (b)(d) Junction to Case (f) NOTES (a) For a dual device surface mounted on a 25mm x 25mm single sided 1oz weight copper split down the middle on 1.6mm FR4 board, in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10sec (c) Repetitive rating25mm x 25mm FR4 PCB, D=0.02, Pulse width=300s - pulse width limited by junction temperature. Refer to transient thermal impedance graph. (d) For a dual device with one active die. (e) For a dual device with 2 active die running at equal power. (f) Thermal resistance from junction to the mounting surface of the drain pin. SYMBOL RJA RJA RJA RJC VALUE 108 75 58.7 26.5 UNIT C/W C/W C/W C/W
ZXMS6005DT8
Document Number DS32248 Rev. 1 - 2
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RECOMMENDED OPERATING CONDITIONS
The ZXMS6005DT8 is optimised for use with C operating from 3.3V and 5V supplies. Symbol VIN TA VIH VIL VP Description Input voltage range Ambient temperature range High level input voltage for MOSFET to be on Low level input voltage for MOSFET to be off Peripheral supply voltage (voltage to which load is referred) Min 0 -40 3 0 0 Max 5.5 125 5.5 0.7 24 Units V C V V V
CHARACTERISTICS
Max Power Dissipation (W)
10
ID Drain Current (A)
Limited by RDS(on)
Limited by Over-Current Protection 1ms
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150
1 active die 2 active die
1
DC 1s 100ms Single Pulse T amb=25C See Note (a)(d) 10ms Limit of s/c protection
100m
10m
1
10
VDS Drain-Source Voltage (V)
Temperature (C)
Safe Operating Area
Thermal Resistance (C/W)
120 100 80
D=0.5 Tamb=25C See Note (a)(d)
Derating Curve
Maximum Power (W)
100
Single Pulse T amb=25C See Note (a)(d)
60 40 20 0 100 1m 10m 100m 1
D=0.2 Single Pulse D=0.05 D=0.1
10
10
100
1k
1 100
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXMS6005DT8
Document Number DS32248 Rev. 1 - 2
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ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER
Static Characteristics
SYMBOL
MIN
TYP
MAX
UNIT
CONDITIONS
Drain-Source Clamp Voltage Off state Drain Current Off state Drain Current Input Threshold Voltage Input Current Input Current Input Current while over temperature active Static Drain-Source On-State Resistance Static Drain-Source On-State Resistance Continuous Drain Current (a)(e) Continuous Drain Current (a)(e) Continuous Drain Current (a)(d) Continuous Drain Current (a)(d) Current Limit (g) Current Limit (g) Dynamic Characteristics Turn On Delay Time Rise time Turn Off Delay Time Fall Time Notes:
VDS(AZ) IDSS IDSS VIN(th) IIN IIN
60
65
70 1 2
V A uA V A A A m
ID=10mA VDS=12V, VIN=0V VDS=36V, VIN=0V VDS=VGS, ID=1mA VIN=+3V VIN=+5V VIN=+5V VIN=+3V, ID=1A
0.7
1 60 120
1.5 100 200 300
RDS(on)
170
250
RDS(on)
150
200
m
VIN=+5V, ID=1A
ID ID ID ID ID(LIM) ID(LIM)
1.4 1.6 1.7 1.8 2.2 3.3 5 7
A A A A A A
VIN=3V; TA=25C VIN=5V; TA=25C VIN=3V; TA=25C VIN=5V; TA=25C VIN=+3V, VIN=+5V
td(on) tr td(off) ff
6 14 34 19
s s s s
VDD=12V, ID=1A, VGS=5V
(g) The drain current is restricted only when the device is in saturation (see graph `typical output characteristic'). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary.
ZXMS6005DT8
Document Number DS32248 Rev. 1 - 2
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June 2010
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PARAMETER Over-temperature Protection Thermal Overload Trip Temperature (h) Thermal hysteresis (h) Note: (h)
SYMBOL
MIN
TYP
MAX
UNIT
CONDITIONS
TJT
150
175 10
C C
Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as "outside" normal operating range, so this part is not designed to withstand over-temperature for extended periods..
ZXMS6005DT8
Document Number DS32248 Rev. 1 - 2
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TYPICAL CHARACTERISTICS
9
ID Drain Current (A)
8 7 6 5 4 3 2 1 0 0 1 2 3 4
5V 4V
4.5V
T A = 25C
120
IIN Input Current (A)
100 80 60 40 20 0 0 1 2 3 4 5
3.5V 3V 2.5V 2V VIN 1.5V
5
6
7
8
9 10 11 12
VDS Drain-Source Voltage (V)
VIN Input Voltage (V)
Typical Output Characteristic
RDS(on) On-Resistance ()
ID = 1A
Input Current vs Input Voltage
1.4
VTH Threshold Voltage (V)
0.4
1.3 1.2 1.1 1.0 0.9 0.8 -75 -50 -25 0 25 50
VIN = VDS ID = 1mA
0.2
T J = 150C
TJ = 25C
0.0 2.0
2.5
3.0
3.5
4.0
4.5
5.0
75 100 125 150
VIN Input Voltage (V)
TJ Junction Temperature (C)
On-Resistance vs Input Voltage
RDS(on) On-Resistance ()
0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -75 -50 -25 0 25 50 75 100 125 150
VIN = 5V VIN = 3V
Threshold Voltage vs Temperature
10
IS Source Curent (A)
T J=150C
1
TJ=25C
0.1
0.01 0.4 0.6 0.8 1.0 1.2
TJ Junction Temperature (C)
VSD Source-Drain Voltage (V)
On-Resistance vs Temperature
Reverse Diode Characteristic
ZXMS6005DT8
Document Number DS32248 Rev. 1 - 2
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Drain-Source Voltage (V)
12 10 8 6 4 2 0 -50 0 50 100 150 200 250 300
VIN ID=1A VDS
Drain-Source Voltage (V)
12 10 8 6 4 2 0 -50 0 50 100 150 200 250 300
VIN VDS ID=1A
Time (s)
Time (s)
Switching Speed
8 6 4 2 0 -2
VIN = 5V VDS = 15V RD = 0
Switching Speed
ID Drain Current (A)
0
2
4
6
8
10
12
Time (ms)
Typical Short Circuit Protection
ZXMS6005DT8
Document Number DS32248 Rev. 1 - 2
8 of 9 www.diodes.com
June 2010
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
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ZXMS6005DT8
Document Number DS32248 Rev. 1 - 2
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